SST2019L-C - SeCoS

SST2019L-C Dual N-Ch Enhancement Mode Power MOSFET

The SST2019L-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SST2019L-C meet the RoHS and Green Product requirement with full function reliability approved. SOT-26 A E L B FEATURES Advanced High Cell Density Tre.

Features

Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available F C H DG K J MARKING L2019 = Date Code PACKAGE INFORMATION Package MPQ SOT-26 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 - 1.30 1.90 REF. 0.25 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. ORDER INFORMATION Part Number Type SST2019L-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Sour.