SST202 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST202 The SST202 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The SOT-23 package is well suited for cost sensitive applications and mass production. (See Packaging Informa.
DIRECT REPLACEMENT FOR SILICONIX SST202 LOW CUT OFF VOLTAGE VGS(off) ≤ 1.5 HIGH GAIN AV = 80 V/V ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Forward Gate Current (Note 1) MAXIMUM VOLTAGES Gate to Drain Voltage Gate to Source Voltage ‐65°C to +150°C ‐55°C to +135°C 350mW 50mA VGDS = ‐40V VGSS = ‐40V SST202 Benefits: High Input Impedance Low Cutoff Voltage Low Noise Battery powered amplifiers Audio Pre-.
The J/SST201 series features low leakage, very low noise, and low cutoff voltage for use with low-level power supplies. .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SST2007-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
2 | SST201 |
Vishay |
N-Channel JFETs | |
3 | SST201 |
Micross |
Amplifier | |
4 | SST2019L-C |
SeCoS |
Dual N-Ch Enhancement Mode Power MOSFET | |
5 | SST204 |
Vishay |
N-Channel JFETs | |
6 | SST204 |
Micross |
Amplifier | |
7 | SST2100 |
Siliconix |
N-Channel Depletion-Mode Lateral DMOS FETs | |
8 | SST211 |
Siliconix |
N-Channel Lateral DMOS FETs | |
9 | SST211 |
TEMIC |
N-Channel Lateral DMOS FETs | |
10 | SST213 |
Siliconix |
N-Channel Lateral DMOS FETs | |
11 | SST213 |
TEMIC |
N-Channel Lateral DMOS FETs | |
12 | SST215 |
Siliconix |
N-Channel Lateral DMOS FETs |