SST2100 - Siliconix

SST2100 N-Channel Depletion-Mode Lateral DMOS FETs

SO/SST2100 SERIES N-Channel Depletion-Mode Lateral DMOS FETs The SD/SST2100 Series is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high operating frequency. This DMOS process effectively bridges the operating frequency gap between JFETs and costly gallium-arsenide devices. Additionall.

Features

unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL SD2100 LIMIT SST2100 Gate-Source Voltage VGS ± 25 ± 25 Drain-Source Voltage VDS 25 25 Drain Current ID 50 50 Power Dissipation (TA= 25°C) PD 350 350 Power Derating 2.8 2.8 Operating Junction Temperature TJ -55 to 150 Storage Temperature T stg Lead Temperature (1/16" from case for 10 seconds) h -55 to 150 300 UNITS V mA mW mW/oC °C 5-12 .:rSiliconix ~ incorporated ELECTRICAL CHARACTERISTICS 1 SO/SST2100 SERIES LIMITS SDISST2100 PARAMETER SYMBOL TEST CONDITIONS TYp2 MIN MAX UNIT STATIC Drain-So.