SST12CP11C - Microchip

SST12CP11C High-Efficiency Power Amplifier

SST12CP11C 2.4 GHz High-Linearity, High-Efficiency Power Amplifier Features • High Gain: - Typically 37 dB gain across 2.4–2.5 GHz over temperature -20°C to +85°C • High linear output power: - >30 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 5 - Meets 802.11g OFDM spectrum mask requirement up to 28 dBm - Typically 25 dBm with <3% EVM.

Features

• High Gain: - Typically 37 dB gain across 2.4
  –2.5 GHz over temperature -20°C to +85°C
• High linear output power: - >30 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 5 - Meets 802.11g OFDM spectrum mask requirement up to 28 dBm - Typically 25 dBm with <3% EVM, 802.11g, 54 Mbps - Typically 24 dBm with <2.5% EVM, 802.11n, MCS7-HT20, 50% duty cycle - Typically 24 dBm with <1.75% EVM, MCS9HT40, 50% duty cycle - Meets 802.11b ACPR requirement up to 28 dBm
• High-speed power-up/down - Turn on/off time (10%-90%) <100 ns
• 10:1 VSWR survivability (unconditionally stable up to 2.