SSM6J206FE - Toshiba Semiconductor

SSM6J206FE High-Speed Switching Applications

SSM6J206FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J206FE ○ Power Management Switch Applications ○ High-Speed Switching Applications • • 1.8 V drive Low ON-resistance: Ron = 320 mΩ (max) (@VGS = -1.8 V) Ron = 186 mΩ (max) (@VGS = -2.5 V) Ron = 130 mΩ (max) (@VGS = -4.0 V) www.DataSheet4U.com Unit: mm Absolute Maximum Ratings (Ta = 2.

Features

lease design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) JEDEC JEITA TOSHIBA ― ― 2-2N1A Weight: 3 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Drain
  –source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol V (BR) DSS V (BR) DSX IDS.