SSM6J213FE - Toshiba Semiconductor

SSM6J213FE Silicon P-Channel MOSFET

SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J213FE ○ Power Management Switch Applications • 1.5-V drive • Low ON-resistance: RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 133 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V) Unit: mm Absolute Maximum Ratings (Ta.

Features

JEITA ― operating temperature/current/voltage, etc.) are within the TOSHIBA 2-2N1J absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 3mg (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150°C during use. Note 2: Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Marking (Top View) 654 PS 123 Equivalent Circuit 654 123 .