SSM3K36TU - Toshiba Semiconductor

SSM3K36TU Silicon N-Channel MOSFET

SSM3K36TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K36TU ○ High-Speed Switching Applications • 1.5-V drive • Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66 Ω (max) (@VGS = 4.5 V) : Ron = 0.63 Ω (max) (@VGS = 5.0 V) Absolute Maximum Ratings (Ta = .

Features

y cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Note2: Mounted on a ceramic board. (25.4 mm × 25.4 mm × 0.8 mm, Cu Pa.