SSM3K15TE - Toshiba Semiconductor

SSM3K15TE High Speed Switching Applications

www.DataSheet4U.com SSM3K15TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15TE High Speed Switching Applications Analog Switch Applications 1.2±0.05 0.32±0.05 ３ 0.14±0.05 0.8±0.05 Unit: mm • • Small package 0.45 0.45 1.4±0.05 0.9±0.1 Low on resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) １ ２ Characte.

Features

. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 3 Equivalent Circuit 3 DP 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-.