SSM3K15F - Toshiba Semiconductor

SSM3K15F Silicon N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15F SSM3K15F High Speed Switching Applications Analog Switch Applications • Small package • Low on resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Unit: mm +0.5 2.5-0.3 +0.25 1.5-0.15 +0.1 0.4-0.05 1 2 3 2.9±0.2 1.9 0.95 0.95 0.3 +0.1 0.16-0.06 Absolute .

Features

ificantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Equivalent Circuit 3 3 DP 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against e.