SSM3K15AFS - Toshiba Semiconductor

SSM3K15AFS Silicon N-Channel MOSFET

SSM3K15AFS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AFS Load Switching Applications • 2.5 V drive • Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Sou.

Features

ility upon reviewing the Weight: 2.4 mg (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 3 Equivalent Circuit (top view) 3 DI 1 2 1 2 Start of commercial production 2011-01 1 2014-03-01 SSM3K15AFS Electrical characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance.