SSM3K15CT - Toshiba Semiconductor

SSM3K15CT Silicon N-Channel MOSFET

SSM3K15CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K15CT High-Speed Switching Applications Analog Switch Applications Unit: mm  Optimum for high-density mounting in small packages  Low ON-resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta  25°C) Characteristics Symbol Ra.

Features

1J1B ratings. Please design the appropriate reliability upon reviewing the Toshiba Weight: 0.75 mg (typ.) Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (10 mm  10 mm  1.0 t, Cu Pad: 100 mm2) Marking (Top View) Pin Condition (Top View) Equivalent Circuit Polarity mark Polarity mark (on the top) 3 1 SB 3 2 Handling Precaution 1. Gate 2. Source 3. Drain
*Electrodes: On the bottom 1 2 When handling individ.