SSG9922E - SeCoS

SSG9922E N-channel MOSFET

The SSG9922E provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 6.20 5.80 0.25 0.40 0.90 0.19 0.25 45 o 0.375 REF 3.80 4.00 Features * Optimal DC/DC Battery Application * Low On-Resistance * Capable Of 2.5V Gate Drive D1 8 D1 7 D2 6 D2 5 0.35 0.49 1.27Typ. 4.80 5.00 0.1.

Features

* Optimal DC/DC Battery Application
* Low On-Resistance
* Capable Of 2.5V Gate Drive D1 8 D1 7 D2 6 D2 5 0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 0 o 8 o 1.35 1.75 Dimensions in millimeters D1 D2 9922ESS Date Code G1 G2 1 S1 2 G1 3 S2 4 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VG [email protected] Continuous Drain Current , VG [email protected] Pulsed Drain Current 1 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 20 ±12 6.8 5.4 25 2 0.016 Unit V V A A A W W/ C o o Total Power Dissipation Linear Derating F.