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SSG9922E |
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| Part Number | SSG9922E |
| Manufacturer | SeCoS |
| Description | The SSG9922E provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 6.20 5.80 0.25 0.40 0.90 0.19 0.25 45 o 0.375 REF ... |
| Features |
* Optimal DC/DC Battery Application * Low On-Resistance * Capable Of 2.5V Gate Drive
D1 8 D1 7 D2 6 D2 5
0.35 0.49
1.27Typ. 4.80 5.00 0.100.25
0 o 8
o
1.35 1.75
Dimensions in millimeters
D1
D2
9922ESS
Date Code
G1
G2
1 S1
2 G1
3 S2
4 G2
S1
S2
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VG [email protected] Continuous Drain Current , VG [email protected] Pulsed Drain Current
1 3 3
Symbol
VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o o
Ratings
20
±12 6.8 5.4 25 2 0.016
Unit
V V A A A W
W/ C
o o
Total Power Dissipation Linear Derating F... |
| Document |
 SSG9922E Data Sheet
PDF 456.69KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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Dual N-Channel Enhancement Mode Power MOSFET |
|
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SeCoS Halbleitertechnologie |
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|
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SeCoS |
N-channel MOSFET |
|
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|
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SeCoS |
N-channel MOSFET |
|