The SSG9973 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 6.20 5.80 0.25 0.40 0.90 0.19 0.25 45 o 0.375 REF 3.80 4.00 0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 Features * Simple drive requirement * Low gate charge D1 8 D1 7 D2 6 D2 5 D1 0 o 8 o 1.35 1.75 Dimensions.
* Simple drive requirement
* Low gate charge
D1 8 D1 7 D2 6 D2 5
D1
0 o 8
o
1.35 1.75
Dimensions in millimeters
D2
Date Code
9973SS
G1 G2
1 S1
2 G1
3 S2
4 G2
S1
S2
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current
1.2 3 3
Symbol
VDS VGS ID@TA=25к ID@TA=70к IDM PD@TA=25к
Ratings
60
±20 3.9 2.5 20 2.0 0.016
Unit
V V A A A W
W /e C e C
Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
Thermal Data
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSG9971 |
SeCoS |
N-channel MOSFET | |
2 | SSG9971A |
SeCoS |
Dual-N Enhancement Mode Power MOSFET | |
3 | SSG9971A-C |
SeCoS |
Dual-N Enhancement Mode Power MOSFET | |
4 | SSG9975 |
SeCoS |
N-channel MOSFET | |
5 | SSG9922E |
SeCoS |
N-channel MOSFET | |
6 | SSG9926J-C |
SeCoS |
Dual N-Channel Enhancement Mode Power MOSFET | |
7 | SSG9926N |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
8 | SSG9960 |
SeCoS |
N-channel MOSFET | |
9 | SSG9962 |
SeCoS |
N-channel MOSFET | |
10 | SSG9410 |
SeCoS |
N-channel MOSFET | |
11 | SSG9435 |
SeCoS |
P-Channel MOSFET | |
12 | SSG9435BDY |
SeCoS |
P-Channel MOSFET |