0.40 0.90 0.19 0.25 The SSG9975 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 45 6.20 5.80 0.25 o 0.375 REF 3.80 4.00 0.35 0.49 1.27Typ. 4.80 5.00 0.10~0.25 Features * RoHS Compliant * Lower On-Resistance * High Breakdown Voltage Date Code 0 o 8 o 1.35 1.75 Di.
* RoHS Compliant
* Lower On-Resistance
* High Breakdown Voltage
Date Code
0 o 8
o
1.35 1.75
Dimensions in millimeters
D1 8
D1 7
D2 6
D2 5
D1
D2
9 975SS
G1
1 S1 2 G1 3 S2 4 G2
G2
S1
S2
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
1 3 3
Symbol
VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o o
Ratings
60
±25 7.6 6.1 30 2 0.016
Unit
V V A A A W
W/ C
o o
Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Tj, Tstg
-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSG9971 |
SeCoS |
N-channel MOSFET | |
2 | SSG9971A |
SeCoS |
Dual-N Enhancement Mode Power MOSFET | |
3 | SSG9971A-C |
SeCoS |
Dual-N Enhancement Mode Power MOSFET | |
4 | SSG9973 |
SeCoS |
N-channel MOSFET | |
5 | SSG9922E |
SeCoS |
N-channel MOSFET | |
6 | SSG9926J-C |
SeCoS |
Dual N-Channel Enhancement Mode Power MOSFET | |
7 | SSG9926N |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
8 | SSG9960 |
SeCoS |
N-channel MOSFET | |
9 | SSG9962 |
SeCoS |
N-channel MOSFET | |
10 | SSG9410 |
SeCoS |
N-channel MOSFET | |
11 | SSG9435 |
SeCoS |
P-Channel MOSFET | |
12 | SSG9435BDY |
SeCoS |
P-Channel MOSFET |