SSE190N04S-C - SeCoS

SSE190N04S-C N-Ch Enhancement Mode Power MOSFET

The SSE190N04S-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSE190N04S-C meet the RoHS and Green Product requirement with full function reliability approved. TO-220 FEATURES High Speed Power Switching Super Low Ga.

Features

High Speed Power Switching Super Low Gate Charge Green Device Available MARKING 190N04S Date Code ORDER INFORMATION 1 Gate Part Number Type SSE190N04S-C Lead (Pb)-free and Halogen-free 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.70 10.60 14.22 16.5 2.54. 3.40 12.7 14.7 1.17 1.78 0.4 1.00 3.60 4.82 REF. H I J K L M Millimeter Min. Max. 2.54 TYP. 2.03 2.92 2.70 3.30 0.33 0.65 5.5 7 1.20 1.40 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1 @VGS=10V.