SSE14N65H-C - SeCoS

SSE14N65H-C N-Channel Super Junction Power MOSFET

The SSE14N65H-C is power MOSFET using Super Junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low switching loss, which provide excellent RDS(ON) and gate charge for mo.

Features

 Advanced Super Junction technology
 Super Low Gate Charge
 Green Device Available MARKING 14N65H  Date Code ORDER INFORMATION Part Number Type SSE14N65H-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1 4 @VGS=10V TC=25°C ID TC=100°C Pulsed Drain Current 2 IDM Power Dissipation TC=25°C PD Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Ratings Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case 1 RθJA RθJC REF. A.