SSE133N12S-C - SeCoS

SSE133N12S-C N-Channel Shielded Gate Trench Power MOSFET

The SSE133N12S-C is the Shielded Gate Technology N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSE133N12S-C meet the RoHS and Green Product requirement with full function reliability approved. TO-220 FEATURES  Shielded Gate Trench Technology  Super.

Features

 Shielded Gate Trench Technology
 Super Low Gate Charge
 Green Device Available MARKING 133N12S  = Date Code ORDER INFORMATION Part Number Type 1 Gate SSE133N12S-C Lead (Pb)-free and Halogen-free 2 Drain 3 Source REF. A B C D E F G Millimeter Min. Max. 9.70 10.60 14.22 16.50 2.54. 3.40 12.70 14.70 1.17 1.78 0.40 1.00 3.60 4.82 REF. H I J K L M Millimeter Min. Max. 2.54 TYP. 2.03 2.92 2.70 4.00 0.33 0.65 5.50 7.00 1.15 1.40 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuo.