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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤70mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved Transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Ga.
·Static drain-source on-resistance:
RDS(on)≤70mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Improved Transconductance
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
52
IDM
Drain Current-Single Pulsed
156
PD
Total Dissipation @TC=25℃
417
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth.
SPW52N50C3 - Infineon Technologies
CoolMOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-247 • Ultra.
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