SPW11N60C2 - Infineon Technologies

SPW11N60C2 Cool MOS Power Transistor

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Features

2002-10-07 Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA SPW11N60C2 Symbol min. RthJC RthJA Tsold - Values typ. max. 1 62 1 260 Unit K/W W/K °C V(BR)DSS V(BR)DS VGS(th) IDSS 600 3.5 700 4.5 5.5 V Drain-source avalanche breakdown voltage VGS =0V, ID =11A Gate th.