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and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
= 480 V, ID = 11 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Symbol min. RthJC RthJA Values typ. max. 1 62 K/W Unit Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=500µΑ, .
SPW11N60S5 - INCHANGE
isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60S5 ISPW11N60S5 ·FEATURES ·Static drain-source on-resist.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPW11N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 2 | SPW11N60C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 3 | SPW11N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPW11N60CFD |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 5 | SPW11N60CFD |
INCHANGE |
N-Channel MOSFET |
|
| 6 | SPW11N80C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 7 | SPW11N80C3 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | SPW12N50C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 9 | SPW12N50C3 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | SPW15N60C3 |
Infineon Technologies |
Power Transistor |
|
| 11 | SPW15N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 12 | SPW15N60CFD |
Infineon Technologies |
Power Transistor |
|