SPW11N60CFD - Infineon Technologies

SPW11N60CFD Cool MOS Power Transistor

and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.

Features

orage temperature Page 1 2003-12-23 SPW11N60CFD Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 11 A, Tj = 125 °C Symbol dv/dt di F/dt Value 80 600 Unit V/ns A/µs Maximum diode commutation speed V DS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Drain-source breakdown voltage Drain-Source avalanche breakdown voltage Gate thresh.