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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤290mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VG.
·Static drain-source on-resistance:
RDS(on)≤290mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
· High peak current capability
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
800
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
17
IDM
Drain Current-Single Pulsed
51
PD
Total Dissipation @TC=25℃
227
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
.
SPW17N80C3 - Infineon Technologies
CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak curren.
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| 1 | SPW17N80C2 |
Infineon Technologies |
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| 3 | SPW11N60C3 |
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| 4 | SPW11N60C3 |
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| 7 | SPW11N60S5 |
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| 8 | SPW11N60S5 |
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| 9 | SPW11N80C3 |
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| 10 | SPW11N80C3 |
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| 11 | SPW12N50C3 |
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| 12 | SPW12N50C3 |
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