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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .
·With TO-251(IPAK) packaging
·High speed switching
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·DC-DC converters
·Motor control
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
7.3
IDM
Drain Current-Single Pulsed
21.9
PD
Total Dissipation
83
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHAR.
SPU07N60C3 - Infineon Technologies
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|---|---|---|---|---|
| 1 | SPU07N60C2 |
Infineon Technologies |
Power Transistor |
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| 2 | SPU07N60S5 |
Infineon Technologies |
Power Transistor |
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| 3 | SPU07N60S5 |
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N-Channel MOSFET |
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| 4 | SPU07N20 |
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| 7 | SPU01N60C3 |
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| 9 | SPU02N60C3 |
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| 10 | SPU02N60C3 |
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N-Channel MOSFET |
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| 11 | SPU02N60S5 |
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| 12 | SPU02N60S5 |
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N-Channel MOSFET |
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