Preliminary Data SIPMOS® Power Transistor Features • N channel • SPD 07N20 VDS RDS(on) ID 200 0.4 7 V Ω A Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current Enhancement mode rated • Avalanche rated • dv/dt www.DataSheet4U.com Type SPD07N20 SPU07N20 Package P-TO252 P-TO251 Ordering Code Packaging Pin 1 G .
• N channel
•
SPD 07N20
VDS RDS(on) ID
200 0.4 7 V Ω A
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
Enhancement mode rated
• Avalanche rated
• dv/dt www.DataSheet4U.com
Type SPD07N20 SPU07N20
Package P-TO252 P-TO251
Ordering Code
Packaging
Pin 1 G
Pin 2 Pin 3 D S
Q67040-S4120-A2 Tape and Reel Q67040-S4112-A2 Tube
Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Symbol Parameter Continuous drain current
Value 7 4.5 28 120 4 6
Unit A
ID
TC = 25 ˚C TC = 100 ˚C
Pulsed drain current
IDpulse EAS EAR
dv/dt
TC = 25 ˚C
Avalan.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPU07N20G |
INCHANGE |
N-Channel MOSFET | |
2 | SPU07N60C2 |
Infineon Technologies |
Power Transistor | |
3 | SPU07N60C3 |
Infineon Technologies |
Power Transistor | |
4 | SPU07N60C3 |
INCHANGE |
N-Channel MOSFET | |
5 | SPU07N60S5 |
Infineon Technologies |
Power Transistor | |
6 | SPU07N60S5 |
INCHANGE |
N-Channel MOSFET | |
7 | SPU01N60C3 |
Infineon |
Cool MOS Power Transistor | |
8 | SPU01N60C3 |
INCHANGE |
N-Channel MOSFET | |
9 | SPU02N60 |
Siemens Semiconductor |
SIPMO Power Transistor | |
10 | SPU02N60C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
11 | SPU02N60C3 |
INCHANGE |
N-Channel MOSFET | |
12 | SPU02N60S5 |
Infineon Technologies |
Power Transistor |