Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPU02N60S5 SPD02N60S5 VDS RDS(on) ID PG-TO252 600 V 3 Ω 1.8 A PG-TO251 2 3 1 3 2 1 Type SPU02N60S5 SPD02N60S5 Package PG-TO251 PG-TO25.
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2008-04-07
SPU02N60S5 SPD02N60S5
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 1.8 A, Tj = 125 °C
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature,
*) 1.6 mm (0.063 in.) from case for 10s
Symbol dv/dt
Value 20
Unit V/ns
Symbol
RthJC RthJA RthJA
Tsold
Values
Unit
min. typ. max.
-
-
5 K/W
-
-
75
-
-
75
-
-
50
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specifi.
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanch.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPU02N60 |
Siemens Semiconductor |
SIPMO Power Transistor | |
2 | SPU02N60C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
3 | SPU02N60C3 |
INCHANGE |
N-Channel MOSFET | |
4 | SPU01N60C3 |
Infineon |
Cool MOS Power Transistor | |
5 | SPU01N60C3 |
INCHANGE |
N-Channel MOSFET | |
6 | SPU03N60C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
7 | SPU03N60C3 |
INCHANGE |
N-Channel MOSFET | |
8 | SPU03N60S5 |
Infineon Technologies |
Cool MOS Power Transistor | |
9 | SPU03N60S5 |
INCHANGE |
N-Channel MOSFET | |
10 | SPU0409HD5H-PB |
Knowles Electronics |
SiSonic Microphone | |
11 | SPU0409LE5H-QB |
Knowles Electronics |
Zero-Height SiSonic Microphone | |
12 | SPU0410HR5H-1 |
Knowles Electronics |
Precision SiSonic Microphone |