and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see a.
3A, VDS < VDD , di/dt=100A/µs, Tjmax=150°C Gate source voltage Power dissipation, TC = 25°C Operating and storage temperature Page 1 2002-10-07 Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case www.DataSheet4U.com SPD07N60C2 SPU07N60C2 Symbol min. RthJC RthJA RthJA Tsold - Values typ. max. 1.5 75 75 50 0.66 260 Unit K/W Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Linear derating factor Soldering temperature, 1.6 mm (0.063 in.) from case for 10s W/K °C Electrical Ch.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPU07N60C3 |
Infineon Technologies |
Power Transistor | |
2 | SPU07N60C3 |
INCHANGE |
N-Channel MOSFET | |
3 | SPU07N60S5 |
Infineon Technologies |
Power Transistor | |
4 | SPU07N60S5 |
INCHANGE |
N-Channel MOSFET | |
5 | SPU07N20 |
Infineon Technologies |
SIPMOS Power Transistor | |
6 | SPU07N20G |
INCHANGE |
N-Channel MOSFET | |
7 | SPU01N60C3 |
Infineon |
Cool MOS Power Transistor | |
8 | SPU01N60C3 |
INCHANGE |
N-Channel MOSFET | |
9 | SPU02N60 |
Siemens Semiconductor |
SIPMO Power Transistor | |
10 | SPU02N60C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
11 | SPU02N60C3 |
INCHANGE |
N-Channel MOSFET | |
12 | SPU02N60S5 |
Infineon Technologies |
Power Transistor |