and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
PP80N06S2-09 SPB80N06S2-09 Symbol min. Values typ. 0.52 max. 0.8 62 62 40 K/W Unit Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJC RthJA RthJA - Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 55 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = V DS ID = 125 µA Zero g.
·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·100% avalanche tested ·Min.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPP80N06S2-05 |
Infineon Technologies |
Power-Transistor | |
2 | SPP80N06S2-07 |
Infineon Technologies |
Power-Transistor | |
3 | SPP80N06S2-08 |
Infineon Technologies |
Power-Transistor | |
4 | SPP80N06S2-H5 |
Infineon Technologies |
Power-Transistor | |
5 | SPP80N06S2L-05 |
Infineon Technologies |
Power-Transistor | |
6 | SPP80N06S2L-06 |
Infineon Technologies |
Power-Transistor | |
7 | SPP80N06S2L-07 |
Infineon Technologies |
Power-Transistor | |
8 | SPP80N06S2L-09 |
Infineon Technologies |
Power-Transistor | |
9 | SPP80N06S2L-11 |
Infineon Technologies |
Power-Transistor | |
10 | SPP80N06S2L-H5 |
Infineon Technologies |
Power-Transistor | |
11 | SPP80N06S-08 |
Infineon Technologies |
Power-Transistor | |
12 | SPP80N03 |
Siemens Semiconductor |
SIPMOS Power Transistor |