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SPP80N06S2-09 |
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| Part Number | SPP80N06S2-09 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your neare... |
| Features |
PP80N06S2-09 SPB80N06S2-09
Symbol min. Values typ. 0.52 max. 0.8 62 62 40 K/W Unit
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
RthJC RthJA RthJA
-
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, ID=1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 55 2.1
Values typ. 3 max. 4
Unit
V
Gate threshold voltage, VGS = V DS
ID = 125 µA
Zero g... |
| Document |
 SPP80N06S2-09 Data Sheet
PDF 354.31KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SPP80N06S2-05 |
Infineon Technologies |
Power-Transistor |
|
| 2 | SPP80N06S2-07 |
Infineon Technologies |
Power-Transistor |
|
| 3 | SPP80N06S2-08 |
Infineon Technologies |
Power-Transistor |
|
| 4 | SPP80N06S2-09 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | SPP80N06S2-H5 |
Infineon Technologies |
Power-Transistor |
|