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SPP80N06S2-09 |
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| Part Number | SPP80N06S2-09 |
| Manufacturer | INCHANGE |
| Description | ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
| Features |
ID=250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-Voltage
IS= 80A ;VGS= 0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 50A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 80V; VGS= 0
SPP80N06S2-09
MIN TYPE MAX UNIT
60
V
2.1
4.0
V
1.3
V
9.1 mΩ
±100 nA
5
µA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intend... |
| Document |
 SPP80N06S2-09 Data Sheet
PDF 217.53KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SPP80N06S2-05 |
Infineon Technologies |
Power-Transistor |
|
| 2 | SPP80N06S2-07 |
Infineon Technologies |
Power-Transistor |
|
| 3 | SPP80N06S2-08 |
Infineon Technologies |
Power-Transistor |
|
| 4 | SPP80N06S2-09 |
Infineon Technologies |
Power-Transistor |
|
| 5 | SPP80N06S2-H5 |
Infineon Technologies |
Power-Transistor |
|