and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
w.DataSheet4U.com SPP80N06S2L-09 SPB80N06S2L-09 Symbol min. Values typ. 0.52 max. 0.8 62 62 40 K/W Unit Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) RthJC RthJA RthJA - Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 55 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPP80N06S2L-05 |
Infineon Technologies |
Power-Transistor | |
2 | SPP80N06S2L-06 |
Infineon Technologies |
Power-Transistor | |
3 | SPP80N06S2L-07 |
Infineon Technologies |
Power-Transistor | |
4 | SPP80N06S2L-11 |
Infineon Technologies |
Power-Transistor | |
5 | SPP80N06S2L-H5 |
Infineon Technologies |
Power-Transistor | |
6 | SPP80N06S2-05 |
Infineon Technologies |
Power-Transistor | |
7 | SPP80N06S2-07 |
Infineon Technologies |
Power-Transistor | |
8 | SPP80N06S2-08 |
Infineon Technologies |
Power-Transistor | |
9 | SPP80N06S2-09 |
INCHANGE |
N-Channel MOSFET | |
10 | SPP80N06S2-09 |
Infineon Technologies |
Power-Transistor | |
11 | SPP80N06S2-H5 |
Infineon Technologies |
Power-Transistor | |
12 | SPP80N06S-08 |
Infineon Technologies |
Power-Transistor |