and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Inf.
by Tjmax Reverse diode dv/dt IS=17A, V DS < V DD, di/dt=100A/µs, T jmax=150°C A V/ns V W °C Gate source voltage Power dissipation TC = 25 °C VGS Ptot Tj , Tstg Page 1 Operating and storage temperature w w w ta a D .2000-05-29 e h S 4 et U o .c m Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) Symbol min. SPP17N80C2 SPB17N80C2 Values typ. 35 max. 0.6 62 62 - Unit RthJC RthJA RthJA - K/W Linear derating fa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPP17N80C3 |
Infineon Technologies |
Power Transistor | |
2 | SPP17N80C3 |
INCHANGE |
N-Channel MOSFET | |
3 | SPP100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
4 | SPP100N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
5 | SPP100N04S2-04 |
Infineon Technologies |
OptiMOS Power-Transistor | |
6 | SPP100N04S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
7 | SPP100N06S2-05 |
Infineon Technologies |
OptiMOS Power-Transistor | |
8 | SPP100N06S2L-05 |
Infineon Technologies |
OptiMOS Power-Transistor | |
9 | SPP100N08S2-07 |
Infineon Technologies |
OptiMOS Power-Transistor | |
10 | SPP100N08S2L-07 |
Infineon Technologies |
OptiMOS Power-Transistor | |
11 | SPP1013 |
SYNC POWER |
P-Channel MOSFET | |
12 | SPP1015 |
SYNC POWER |
P-Channel MOSFET |