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and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
P100N08S2-07 SPB100N08S2-07 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.3 max. 0.5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 75 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = V DS ID =250µA Zero ga.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPP100N08S2L-07 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 2 | SPP100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 3 | SPP100N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 4 | SPP100N04S2-04 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 5 | SPP100N04S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 6 | SPP100N06S2-05 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 7 | SPP100N06S2L-05 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 8 | SPP1013 |
SYNC POWER |
P-Channel MOSFET |
|
| 9 | SPP1015 |
SYNC POWER |
P-Channel MOSFET |
|
| 10 | SPP1021 |
SYNC POWER |
Dual P-Channel MOSFET |
|
| 11 | SPP1023 |
SYNC POWER |
Dual P-Channel MOSFET |
|
| 12 | SPP1027 |
SYNC POWER |
Dual P-Channel MOSFET |
|