The SPP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer po.
P-Channel
-20V/0.45A,RDS(ON)=0.52Ω@VGS=-4.5V -20V/0.35A,RDS(ON)=0.70Ω@VGS=-2.5V -20V/0.25A,RDS(ON)=0.95Ω@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-523 (SC-89) package design
PIN CONFIGURATION( SOT-523 / SC-89 )
PART MARKING
2020/04/15 Ver.4
Page 1
SPP1013
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G S D
Description Gate Source Drain
ORDERING INFORMATION
Part Number
Package
SPP1013S52RGB
SOT-523
※ SPP1013S52RGB : Tape Reel ; Pb
– Free, Halogen
– Free
Part Mark.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPP1015 |
SYNC POWER |
P-Channel MOSFET | |
2 | SPP100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
3 | SPP100N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
4 | SPP100N04S2-04 |
Infineon Technologies |
OptiMOS Power-Transistor | |
5 | SPP100N04S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
6 | SPP100N06S2-05 |
Infineon Technologies |
OptiMOS Power-Transistor | |
7 | SPP100N06S2L-05 |
Infineon Technologies |
OptiMOS Power-Transistor | |
8 | SPP100N08S2-07 |
Infineon Technologies |
OptiMOS Power-Transistor | |
9 | SPP100N08S2L-07 |
Infineon Technologies |
OptiMOS Power-Transistor | |
10 | SPP1021 |
SYNC POWER |
Dual P-Channel MOSFET | |
11 | SPP1023 |
SYNC POWER |
Dual P-Channel MOSFET | |
12 | SPP1027 |
SYNC POWER |
Dual P-Channel MOSFET |