The SPP1021 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook comput.
P-Channel -20V/0.45A,RDS(ON)=520mΩ@VGS=-4.5V -20V/0.35A,RDS(ON)=700mΩ@VGS=-2.5V -20V/0.25A,RDS(ON)=1500mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD protected SOT-563 (SC-89-6L) package design PIN CONFIGURATION (SOT-563 / SC-89-6L) PART MARKING 2022/09/29 Ver.4 Page 1 SPP1021 Dual P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Description Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain1 ORDERING INFORMATION Part Number Package SPP1021S56RGB S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPP1023 |
SYNC POWER |
Dual P-Channel MOSFET | |
2 | SPP1027 |
SYNC POWER |
Dual P-Channel MOSFET | |
3 | SPP100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
4 | SPP100N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
5 | SPP100N04S2-04 |
Infineon Technologies |
OptiMOS Power-Transistor | |
6 | SPP100N04S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
7 | SPP100N06S2-05 |
Infineon Technologies |
OptiMOS Power-Transistor | |
8 | SPP100N06S2L-05 |
Infineon Technologies |
OptiMOS Power-Transistor | |
9 | SPP100N08S2-07 |
Infineon Technologies |
OptiMOS Power-Transistor | |
10 | SPP100N08S2L-07 |
Infineon Technologies |
OptiMOS Power-Transistor | |
11 | SPP1013 |
SYNC POWER |
P-Channel MOSFET | |
12 | SPP1015 |
SYNC POWER |
P-Channel MOSFET |