The SPN2318W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and.
40V/3.9A,RDS(ON)=56mΩ@VGS=10V 40V/3.5A,RDS(ON)=62mΩ@VGS=4.5V 40V/2.0A,RDS(ON)=95mΩ@VGS=2.5V Super high density cell design for extremely low
RDS(ON) Exceptional on-resistance and maximum DC
current capability SOT-23 package design
PIN CONFIGURATION ( SOT-23 )
PART MARKING
2020/09/02 Ver.2
Page 1
SPN2318W
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G S D
Description Gate Source Drain
ORDERING INFORMATION
Part Number
Package
SPN2318WS23RGB
SOT-23
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN2318WS23RGB : Tape Reel ; Pb
– Free ; Halogen -F.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPN2318 |
SYNC POWER |
N-Channel MOSFET | |
2 | SPN2302 |
SYNC POWER |
N-Channel MOSFET | |
3 | SPN2302A |
SYNC POWER |
N-Channel MOSFET | |
4 | SPN2302D |
SYNC POWER |
N-Channel MOSFET | |
5 | SPN2302W |
SYNC POWER |
N-Channel MOSFET | |
6 | SPN2304 |
SYNC |
N-Channel MOSFET | |
7 | SPN2304W |
SYNC POWER |
N-Channel MOSFET | |
8 | SPN2306W |
SYNC POWER |
N-Channel MOSFET | |
9 | SPN2308 |
SYNC POWER |
N-Channel MOSFET | |
10 | SPN230N06 |
SYNC POWER |
N-Channel MOSFET | |
11 | SPN230T06 |
SYNC POWER |
N-Channel MOSFET | |
12 | SPN2322 |
SYNC POWER |
Dual N-Channel MOSFET |