SPN2322 - SYNC POWER

SPN2322 Dual N-Channel MOSFET

The SPN2322 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application notebook computer power management and other battery powered .

Features

 20V/4.0A,RDS(ON)=26mΩ@VGS=4.5V  20V/3.0A,RDS(ON)=35mΩ@VGS=2.5V  20V/2.0A,RDS(ON)=50mΩ@VGS=1.8V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  TDFN2x2-6L package design APPLICATIONS
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter PIN CONFIGURATION(TDFN2x2
  –6L) PART MARKING 2020/05/18 Ver.2 Page 1 SPN2322 Dual N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 Exposed Backside Metal Symbol S1 G1 D2 S2 G2 D1.