SPN230T06 - SYNC POWER

SPN230T06 N-Channel MOSFET

The SPN230T06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power To.

Features

 60V/230A, RDS(ON)=2.5mΩ@VGS=10V  High density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  TO-220-3L and TO-263-2L package design PIN CONFIGURATION TO-220-3L TO-263-2L PART MARKING 2020/05/11 Ver 3 Page 1 SPN230T06 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPN230T06T220TGB TO-220-3L SPN230T06T262RGB TO-263-2L ※ SPN230T06T220TGB : Tube ; Pb
  – Free ; Halogen - Free ※ SPN230T06T262RGB : Tape&Reel ; Pb
  – Free ; Halogen -.