SPN2302W - SYNC POWER

SPN2302W N-Channel MOSFET

The SPN2302W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and .

Features

20V/3.6A,RDS(ON)= 97mΩ@VGS=4.5V 20V/3.1A,RDS(ON)= 113mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PIN CONFIGURATION(SOT-23) PART MARKING S02WYW 2012/08/06 Ver.2 Page 1 http://www.Datasheet4U.com SPN2302W N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 ORDERING INFORMATION Part Number SPN2302WS23RG SPN2302WS23RGB Package SOT-23 SOT-23 Part Marking S02WYW S02WYW Symbol G S D Description Gate Source Drain ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN2302WS23RG : T.