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SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO220FP P G-TO262 560 0.19 21 PG-TO220 V .
tive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt Rev. 3.2 7) A V -55...+150 SPP21N50C3 SPI21N50C3, SPA21N50C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 400 V, ID = 21 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footp.
SPI21N50C3 - INCHANGE
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-262(I2PAK) package ·Low input capacitance and gate charge ·Low gate i.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPI21N10 |
Infineon Technologies |
SIPMOS Power-Transistor |
|
| 2 | SPI20N60C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 3 | SPI20N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPI20N60CFD |
INCHANGE |
N-Channel MOSFET |
|
| 5 | SPI20N60CFD |
Infineon Technologies |
Power Transistor |
|
| 6 | SPI20N65C3 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | SPI20N65C3 |
Infineon Technologies |
Power Transistor |
|
| 8 | SPI-070-xx |
ISU |
SMD High Current Power Induvtor |
|
| 9 | SPI-100-xx |
ISU |
SMD High Current Power Induvtor |
|
| 10 | SPI-130-50 |
ISU |
SMD High Current Power Induvtor |
|
| 11 | SPI-130-xx |
ISU |
SMD High Current Power Induvtor |
|
| 12 | SPI-235-19 |
Sanyo Semicon Device |
Ultraminiature photointerrupter (single-transistor type) |
|