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SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 V DS RDS(on) ID PG-TO262 PG-TO220FP 650 0.19 20.7 PG-TO220.
tage A V W Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C 208 34.5 Operating and storage temperature Rev. 3.1 Page 1 T j , Tstg -55...+150 °C 2009-12-01 SPP20N65C3, SPA20N65C3 SPI20N65C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 20.7 A, T j = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol min. RthJC Values typ. max. Unit Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD versi.
SPI20N65C3 - INCHANGE
·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPI20N60C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 2 | SPI20N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | SPI20N60CFD |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPI20N60CFD |
Infineon Technologies |
Power Transistor |
|
| 5 | SPI21N10 |
Infineon Technologies |
SIPMOS Power-Transistor |
|
| 6 | SPI21N50C3 |
Infineon Technologies |
Power Transistor |
|
| 7 | SPI21N50C3 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | SPI-070-xx |
ISU |
SMD High Current Power Induvtor |
|
| 9 | SPI-100-xx |
ISU |
SMD High Current Power Induvtor |
|
| 10 | SPI-130-50 |
ISU |
SMD High Current Power Induvtor |
|
| 11 | SPI-130-xx |
ISU |
SMD High Current Power Induvtor |
|
| 12 | SPI-235-19 |
Sanyo Semicon Device |
Ultraminiature photointerrupter (single-transistor type) |
|