Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
ge AC (f >1Hz) Power dissipation, T C = 25°C Operating and storage temperature Rev. 2.5 Page 1 SPI20N60CFD Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 20.7 A, Tj = 125 °C Symbol dv/dt di F/dt Value 80 900 Unit V/ns A/µs Maximum diode commutation speed V DS = 480 V, ID = 20.7 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Drain-s.
SPI20N60CFD - INCHANGE
·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPI20N60C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 2 | SPI20N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | SPI20N65C3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPI20N65C3 |
Infineon Technologies |
Power Transistor |
|
| 5 | SPI21N10 |
Infineon Technologies |
SIPMOS Power-Transistor |
|
| 6 | SPI21N50C3 |
Infineon Technologies |
Power Transistor |
|
| 7 | SPI21N50C3 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | SPI-070-xx |
ISU |
SMD High Current Power Induvtor |
|
| 9 | SPI-100-xx |
ISU |
SMD High Current Power Induvtor |
|
| 10 | SPI-130-50 |
ISU |
SMD High Current Power Induvtor |
|
| 11 | SPI-130-xx |
ISU |
SMD High Current Power Induvtor |
|
| 12 | SPI-235-19 |
Sanyo Semicon Device |
Ultraminiature photointerrupter (single-transistor type) |
|