Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
6331& 63,1&63$1& &RRO026 3RZHU7UDQVLVWRU )HDWXUH • 1HZUHYROXWLRQDUKLJKYROWDJHWHFKQRORJ •:RUOGZLGHEHVW5'6 RQ LQ72 •8OWUDORZJDWHFKDUJH 3G72FP VDS#Tjmax 5'6 RQ ,' 3G722 • 3HULRGLFDYDODQFKHUDWHG •([WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW P-TO220-3-31 23 1 • ,PSURYHGWUDQVFRQGXFWDQFH •3G72.
HWHPSHUDWXUH Reverse diode dv/dt 7) 6PERO ,' ,'SXOV ($6 EAR ,$5 VGS VGS Ptot 7M7VWJ dv/dt 9DOXH 633B, 63$ ± ± 15 8QLW $ $ P- $ 9 : & V/ns Rev. 3.2 Page 1 2018-02-12 6331& 63,1&63$1& 0D[LPXP5DWLQJV 3DUDPHWHU 'UDLQ6RXUFHYROWDJHVORSH VDS 9,' $Tj & 7KHUPDO&KDUDFWHULVWLFV 3DUDPHWHU 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH)XOO3$. 7KHUPDOUHVLVWDQFHMXQFWLRQDPELHQWOHDGHG 7KHUPDOUHVLVWDQFHMXQFWLRQDPELHQW.
SPI20N60C3 - INCHANGE
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-262(I2PAK) package ·Low input capacitance and gate charge ·High peak .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPI20N60CFD |
INCHANGE |
N-Channel MOSFET |
|
| 2 | SPI20N60CFD |
Infineon Technologies |
Power Transistor |
|
| 3 | SPI20N65C3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPI20N65C3 |
Infineon Technologies |
Power Transistor |
|
| 5 | SPI21N10 |
Infineon Technologies |
SIPMOS Power-Transistor |
|
| 6 | SPI21N50C3 |
Infineon Technologies |
Power Transistor |
|
| 7 | SPI21N50C3 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | SPI-070-xx |
ISU |
SMD High Current Power Induvtor |
|
| 9 | SPI-100-xx |
ISU |
SMD High Current Power Induvtor |
|
| 10 | SPI-130-50 |
ISU |
SMD High Current Power Induvtor |
|
| 11 | SPI-130-xx |
ISU |
SMD High Current Power Induvtor |
|
| 12 | SPI-235-19 |
Sanyo Semicon Device |
Ultraminiature photointerrupter (single-transistor type) |
|