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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤240mΩ(@VGS= -10V; ID= -10.6A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA.
·Static drain-source on-resistance:
RDS(on)≤240mΩ(@VGS= -10V; ID= -10.6A)
·Advanced trench process technology
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Fast switching application.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
-15
A
PD
Total Dissipation @TC=25℃
128
W
Tj
Max.
Operating
Temperature
Junction -55~175
℃
Tstg
Storage Temperature
-55~175
℃
·THERMAL CHARACTERISTICS
SYMB.
SPD15P10PG - Infineon Technologies
SIPMOS® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Normal level • Avalanche rated • Pb-free lead .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPD15P10P |
Infineon |
Small-Signal-Transistor |
|
| 2 | SPD15P10PL |
Infineon |
Power Transistor |
|
| 3 | SPD15P10PL |
INCHANGE |
P-Channel MOSFET |
|
| 4 | SPD15P10PLG |
Infineon Technologies |
Power Transistor |
|
| 5 | SPD15 |
CARLO GAVAZZI |
Switching Power Supply |
|
| 6 | SPD1510HF |
SSDI |
15 AMP HYPERFAST RECOVERY RECTIFIER |
|
| 7 | SPD1515HF |
SSDI |
15 AMP HYPERFAST RECOVERY RECTIFIER |
|
| 8 | SPD1520HF |
SSDI |
15 AMP HYPERFAST RECOVERY RECTIFIER |
|
| 9 | SPD15N06S2L-64 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 10 | SPD1001 |
SSDI |
(SPD0801 - SPD1001) SCHOTTKY RECTIFIER |
|
| 11 | SPD1001SMS |
SSDI |
(SPD0801SMS - SPD1001SMS) SCHOTTKY RECTIFER |
|
| 12 | SPD1002 |
SSDI |
(SPD0802 - SPD1002) SCHOTTKY RECTIFIER |
|