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SPD15P10PL - Infineon

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SPD15P10PL Power Transistor

SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • logic level • Avalanche rated • Pb-free lead plating; RoHS compliant  Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPD15P10PL G -100 V 0.20 : -15 A PG-TO252-3 Type Package SPD15P10PL G PG-TO252-3 Marking 15P10PL Lead free Packing Yes Non dry Maximum ratings.

Features


• P-Channel
• Enhancement mode
• logic level
• Avalanche rated
• Pb-free lead plating; RoHS compliant
 Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPD15P10PL G -100 V 0.20 : -15 A PG-TO252-3 Type Package SPD15P10PL G PG-TO252-3 Marking 15P10PL Lead free Packing Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ID T C=25 °C T C=100 °C I D,pulse T C=25 °C E .

The same part from a different manufacturer

Datasheet SPD15P10PL - INCHANGE SPD15P10PL

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤270mΩ(@VGS= -4.5V; ID= -9.7A) ·Ad.

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