and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.
esistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Symbol min. RthJC RthJA RthJA - Values typ. 2.14 max. 3.2 100 75 50 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 55 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = V DS ID=14µA Zero gate voltage drain current V DS=55V, VGS=0V, Tj=25°C V DS=55V, VGS=0V, Tj=125°C µA 0.01 1 1 60 46 1 100 100 85 64 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPD15 |
CARLO GAVAZZI |
Switching Power Supply | |
2 | SPD1510HF |
SSDI |
15 AMP HYPERFAST RECOVERY RECTIFIER | |
3 | SPD1515HF |
SSDI |
15 AMP HYPERFAST RECOVERY RECTIFIER | |
4 | SPD1520HF |
SSDI |
15 AMP HYPERFAST RECOVERY RECTIFIER | |
5 | SPD15P10P |
Infineon |
Small-Signal-Transistor | |
6 | SPD15P10PG |
INCHANGE |
P-Channel MOSFET | |
7 | SPD15P10PG |
Infineon Technologies |
Small-Signal-Transistor | |
8 | SPD15P10PL |
Infineon |
Power Transistor | |
9 | SPD15P10PL |
INCHANGE |
P-Channel MOSFET | |
10 | SPD15P10PLG |
Infineon Technologies |
Power Transistor | |
11 | SPD1001 |
SSDI |
(SPD0801 - SPD1001) SCHOTTKY RECTIFIER | |
12 | SPD1001SMS |
SSDI |
(SPD0801SMS - SPD1001SMS) SCHOTTKY RECTIFER |