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SPD15P10PG |
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| Part Number | SPD15P10PG |
| Manufacturer | INCHANGE |
| Description | isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤240mΩ(@VGS= -10V; ID= -10.6A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot vari... |
| Features |
·Static drain-source on-resistance: RDS(on)≤240mΩ(@VGS= -10V; ID= -10.6A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -15 A PD Total Dissipation @TC=25℃ 128 W Tj Max. Operating Temperature Junction -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMB... |
| Document |
 SPD15P10PG Data Sheet
PDF 259.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPD15P10P |
Infineon |
Small-Signal-Transistor |
|
| 2 | SPD15P10PG |
Infineon Technologies |
Small-Signal-Transistor |
|
| 3 | SPD15P10PL |
Infineon |
Power Transistor |
|
| 4 | SPD15P10PL |
INCHANGE |
P-Channel MOSFET |
|
| 5 | SPD15P10PLG |
Infineon Technologies |
Power Transistor |
|