SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPD04P10PL G -100 V 850 mΩ -4.2 A PG-TO-252-3 Type Package SPD04P10PL G PG-TO252-3 Marking 04P10PL Lead free Yes Packing Non dry Tape and reel .
• P-Channel
• Enhancement mode
• Logic level
• Avalanche rated
• Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101
Product Summary V DS R DS(on),max ID
SPD04P10PL G
-100 V 850 mΩ -4.2 A
PG-TO-252-3
Type
Package
SPD04P10PL G PG-TO252-3
Marking 04P10PL
Lead free Yes
Packing Non dry
Tape and reel information 1000 pcs / reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD cla.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPD04P10PG |
Infineon Technologies |
Power-Transistor | |
2 | SPD04N50C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
3 | SPD04N50C3 |
INCHANGE |
N-Channel MOSFET | |
4 | SPD04N60C2 |
Infineon Technologies |
Cool MOS Power Transistor | |
5 | SPD04N60C3 |
Infineon |
Power Transistor | |
6 | SPD04N60C3 |
INCHANGE |
N-Channel MOSFET | |
7 | SPD04N60S5 |
Infineon |
Cool MOS Power Transistor | |
8 | SPD04N60S5 |
INCHANGE |
N-Channel MOSFET | |
9 | SPD04N80C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
10 | SPD04N80C3 |
INCHANGE |
N-Channel MOSFET | |
11 | SPD005G |
Smartec |
(SPD Series) Smartec Pressure Sensor | |
12 | SPD01510KS |
SiPower |
Spandard Recovery Diodes |