SPD04N60S5 - Infineon

SPD04N60S5 Cool MOS Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPU04N60S5 SPD04N60S5 VDS RDS(on) ID PG-TO252 600 V 0.95 Ω 4.5 A PG-TO251 2 3 1 3 2 1 Type SPU04N60S5 SPD04N60S5 Package PG-TO251 PG-TO252.

Features

e 1 2008-04-08 SPU04N60S5 SPD04N60S5 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 4.5 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature,
*) 1.6 mm (0.063 in.) from case for 10s Symbol dv/dt Value 20 Unit V/ns Symbol RthJC RthJA RthJA Tsold Values Unit min. typ. max. - - 2.5 K/W - - 62 - - 62 - 35 - - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified.