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SPD04N80C3 CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ • Fully qualified according to JEDEC for Industrial Applications 800 V 1.3 ! 23 nC • Pb-free lead plating; RoHS compliant; Halogen free mold compound • Ultra.
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ
• Fully qualified according to JEDEC for Industrial Applications
800 V 1.3 ! 23 nC
• Pb-free lead plating; RoHS compliant; Halogen free mold compound
• Ultra low gate charge
PG-TO252-3
• Ultra low effective capacitances
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Type SPD04N80C3
Package PG-TO252-3
Marking 04N80C3
Maximum ratings, at T j=25 °C, un.
SPD04N80C3 - INCHANGE
isc N-Channel MOSFET Transistor SPD04N80C3,ISPD04N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.3Ω ·Enh.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPD04N50C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 2 | SPD04N50C3 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | SPD04N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 4 | SPD04N60C3 |
Infineon |
Power Transistor |
|
| 5 | SPD04N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | SPD04N60S5 |
Infineon |
Cool MOS Power Transistor |
|
| 7 | SPD04N60S5 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | SPD04P10PG |
Infineon Technologies |
Power-Transistor |
|
| 9 | SPD04P10PLG |
Infineon Technologies |
Power-Transistor |
|
| 10 | SPD005G |
Smartec |
(SPD Series) Smartec Pressure Sensor |
|
| 11 | SPD01510KS |
SiPower |
Spandard Recovery Diodes |
|
| 12 | SPD01520KS |
SiPower |
Spandard Recovery Diodes |
|